| PART |
Description |
Maker |
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| 1N60 |
Low forward voltage drop. Guard ring construction for transient protection.
|
TY Semiconductor Co., Ltd
|
| MBR1550CT |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd...
|
| MM3Z10VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| UMC5N |
Epitaxial Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| 2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
| MMBT2222 |
Epitaxial planar die construction.
|
TY Semiconductor Co., Ltd
|
| BZT52C4V7T |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
| FMBT2222A |
FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction
|
First Components International
|
| BAT54AW BAT54SW BAT54CW |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
|
NXP Semiconductors
|
| BZT52C30 BZT52C9V1 BZT52C2V0 |
Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
TY Semiconductor Co., Ltd
|
